Microsemi
JANTXV2N6762
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
MountingThrough Hole
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Technical Specifications
Microsemi JANTXV2N6762 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 1.8R |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/542 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JANTXV2N6762 Datasheet
Download the complete datasheet for Microsemi JANTXV2N6762 to view detailed technical specifications.
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