Microsemi
JANTXV2N6788U
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15
PackageCLCC
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV2N6788U technical specifications.
General
| Package/Case | CLCC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/555 |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV2N6788U Datasheet
Download the complete datasheet for Microsemi JANTXV2N6788U to view detailed technical specifications.
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