Microsemi
JANTXV2N6800U
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
PackageCLCC
MountingSurface Mount
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Technical Specifications
Microsemi JANTXV2N6800U technical specifications.
General
| Package/Case | CLCC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/557 |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV2N6800U Datasheet
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