The MAP4KE36CAE3 is a silicon bidirectional transient voltage suppressor diode with a minimum breakdown voltage of 34.2V and a maximum breakdown voltage of 37.8V. It has a maximum non-repetitive peak reverse power dissipation of 400mW and a maximum power dissipation of 1.13W. The diode is packaged in a 2-pin DO-204AL axial package with a terminal position of axial. It is suitable for use in a variety of applications requiring transient voltage suppression.
Microsemi MAP4KE36CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30.8 |
| Breakdown Voltage-Min | 34.2 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Breakdown Voltage-Max | 37.8 |
| Power Dissipation-Max | 1.13 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MAP4KE36CAE3 to view detailed technical specifications.
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