The MAP6KE11AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 11.6V and a maximum non-repetitive peak reverse power dissipation of 600W. It has a maximum power dissipation of 5W and is available in a 2-pin axial package. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The device is suitable for use in applications where high voltage suppression is required, such as in electronic circuits that are prone to voltage spikes or surges.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MAP6KE11AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 9.4 |
| Breakdown Voltage-Min | 10.5 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 11.6 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Microsemi MAP6KE11AE3 Datasheet
Download the complete datasheet for Microsemi MAP6KE11AE3 to view detailed technical specifications.
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