The MAP6KE18AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 18.9V and a maximum non-repetitive peak reverse power dissipation of 600W. It has a power dissipation maximum of 5W and is available in a 2-pin axial package. The diode element material is silicon and it is suitable for use in transient voltage suppression applications. The device is manufactured by Microsemi and is part of the category of transient voltage suppressors.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MAP6KE18AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15.3 |
| Breakdown Voltage-Min | 17.1 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 18.9 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Microsemi MAP6KE18AE3 Datasheet
Download the complete datasheet for Microsemi MAP6KE18AE3 to view detailed technical specifications.
No datasheet is available for this part.