This silicon transient voltage suppressor diode features a maximum reverse voltage of 6V and a maximum non-repetitive peak reverse power dissipation of 600mW. The device is packaged in a 2-pin DO-215AA package and has a maximum power dissipation of 1.38W. The diode is unidirectional and has a nominal breakdown voltage of 7.02V.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Microsemi MASMBG6.0AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 6 |
| Breakdown Voltage-Min | 6.67 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 10.3 |
| Breakdown Voltage-Nom | 7.02 |
| Breakdown Voltage-Max | 7.37 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Datasheet
Microsemi MASMBG6.0AE3 Datasheet
Download the complete datasheet for Microsemi MASMBG6.0AE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.