The MASMBJ13A is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 13V and a maximum non-repetitive peak reverse power dissipation of 600mW. It has a nominal breakdown voltage of 15.15V and a maximum clamping voltage of 21.5V. The diode is available in a 2-pin DO-214AA package type. The operating temperature range is not specified in the provided data.
Microsemi MASMBJ13A technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 14.4 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 21.5 |
| Breakdown Voltage-Nom | 15.15 |
| Breakdown Voltage-Max | 15.9 |
| Power Dissipation-Max | 1.38 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MASMBJ13A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.