This silicon bidirectional transient voltage suppressor diode features a maximum reverse voltage of 13V and a maximum non-repetitive peak reverse power dissipation of 600mW. It has a nominal breakdown voltage of 15.15V and a maximum breakdown voltage of 15.9V. The diode is packaged in a 2-pin DO-214AA package type.
Microsemi MASMBJ13CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 14.4 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 21.5 |
| Breakdown Voltage-Nom | 15.15 |
| Breakdown Voltage-Max | 15.9 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MASMBJ13CAE3 to view detailed technical specifications.
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