The MASMBJ33A/TR is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 33V and a minimum breakdown voltage of 36.7V. It has a maximum non-repetitive peak reverse power dissipation of 600mW and a maximum clamping voltage of 53.3V. The diode is packaged in a 2-pin DO-214AA package and is suitable for use in applications where transient voltage suppression is required. The operating temperature range is not specified, but the device is likely suitable for use in a wide range of temperatures. The MASMBJ33A/TR is a product of Microsemi.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MASMBJ33A/TR technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Microsemi MASMBJ33A/TR Datasheet
Download the complete datasheet for Microsemi MASMBJ33A/TR to view detailed technical specifications.
No datasheet is available for this part.