The MASMBJ48CAE3 is a bidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 48V and a minimum breakdown voltage of 53.3V. It has a maximum non-repetitive peak reverse power dissipation of 600mW and a maximum clamping voltage of 77.4V. The diode is packaged in a DO-214AA package, a 2-pin dual terminal device. It is suitable for use in applications requiring transient voltage suppression.
Microsemi MASMBJ48CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 48 |
| Breakdown Voltage-Min | 53.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 77.4 |
| Breakdown Voltage-Nom | 56.1 |
| Breakdown Voltage-Max | 58.9 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MASMBJ48CAE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.