The MASMCGLCE10AE3 is a silicon unidirectional transient voltage suppressor diode from Microsemi. It has a maximum reverse voltage of 12.3V and a maximum non-repetitive peak reverse power dissipation of 1500mW. The diode is packaged in a 2-pin DO-215AB package. It operates over a temperature range of -55°C to 150°C. The device is suitable for transient voltage suppression applications.
Microsemi MASMCGLCE10AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.1 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 12.3 |
| Power Dissipation-Max | 5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MASMCGLCE10AE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.