The MASMCJ58AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 58V and a maximum power dissipation of 1.56W. It has a minimum breakdown voltage of 64.4V and a maximum breakdown voltage of 71.2V. The diode is packaged in a 2-pin DO-214AB package and is suitable for use in high-reliability applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MASMCJ58AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 58 |
| Breakdown Voltage-Min | 64.4 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 71.2 |
| Power Dissipation-Max | 1.56 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MASMCJ58AE3 Datasheet
Download the complete datasheet for Microsemi MASMCJ58AE3 to view detailed technical specifications.
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