The MSMBJ110A is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 110V and a maximum non-repetitive peak reverse power dissipation of 600W. It features a 2-pin SMBJ package and a maximum power dissipation of 1.38W. The diode is suitable for use in applications requiring transient voltage suppression. Operating temperature range is not specified, but the device is likely suitable for use in a wide range of environments. Compliance with specific standards is not mentioned in the provided data.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MSMBJ110A technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 110 |
| Breakdown Voltage-Min | 122 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 135 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Microsemi MSMBJ110A Datasheet
Download the complete datasheet for Microsemi MSMBJ110A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.