The MX1.5KE350AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 300V and a maximum power dissipation of 1.52W. It features an axial package with 2 terminals and is constructed from a single silicon diode element. The diode has a minimum breakdown voltage of 332V and a maximum breakdown voltage of 368V. It can handle a maximum non-repetitive peak reverse power dissipation of 1500W.
Microsemi MX1.5KE350AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 300 |
| Breakdown Voltage-Min | 332 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 368 |
| Power Dissipation-Max | 1.52 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MX1.5KE350AE3 to view detailed technical specifications.
No datasheet is available for this part.