The MXLPLAD15KP100AE3 is a single-element, unidirectional transient voltage suppressor diode from Microsemi. It features a SILICON diode element with a maximum reverse voltage of 100V and a maximum non-repetitive peak reverse power dissipation of 15kW. The device has a maximum clamping voltage of 162V and a maximum breakdown voltage of 123V. It is packaged in a R-PSSO-G1 package type and is suitable for use in a variety of applications requiring transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXLPLAD15KP100AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 162 |
| Breakdown Voltage-Nom | 117 |
| Breakdown Voltage-Max | 123 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MXLPLAD15KP100AE3 Datasheet
Download the complete datasheet for Microsemi MXLPLAD15KP100AE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.