This silicon transient voltage suppressor diode features a breakdown voltage of 13.3V and a maximum power dissipation of 2.5W. It has a clamping voltage of 19.9V and a non-repetitive peak reverse power dissipation of 15kW. The diode is unidirectional and has a single terminal position. It is available in a R-PSSO-G1 package type.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXLPLAD15KP12AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MXLPLAD15KP12AE3 Datasheet
Download the complete datasheet for Microsemi MXLPLAD15KP12AE3 to view detailed technical specifications.
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