The MXLPLAD15KP160AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 160V and a maximum non-repetitive peak reverse power dissipation of 15000W. It has a breakdown voltage of 187.5V and a clamping voltage of 259V. The diode is packaged in a 1-pin R-PSSO-G1 package and is suitable for use in applications where high voltage suppression is required. The operating temperature range is not specified in the provided data.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXLPLAD15KP160AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 160 |
| Breakdown Voltage-Min | 178 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 259 |
| Breakdown Voltage-Nom | 187.5 |
| Breakdown Voltage-Max | 197 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MXLPLAD15KP160AE3 Datasheet
Download the complete datasheet for Microsemi MXLPLAD15KP160AE3 to view detailed technical specifications.
No datasheet is available for this part.