The MXLSMBJ24CAE3 is a silicon bidirectional transient voltage suppressor diode with a maximum reverse voltage of 24V and a maximum non-repetitive peak reverse power dissipation of 600mW. It features a DO-214AA package and is suitable for transient voltage suppression applications. The diode has a breakdown voltage of 28.1V and a clamping voltage of 38.9V. It can handle a maximum power dissipation of 1.38W and operates within a temperature range of -55°C to 150°C.
Microsemi MXLSMBJ24CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 24 |
| Breakdown Voltage-Min | 26.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 38.9 |
| Breakdown Voltage-Nom | 28.1 |
| Breakdown Voltage-Max | 29.5 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MXLSMBJ24CAE3 to view detailed technical specifications.
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