Microsemi
MXSMBJ11AE3
Silicon Unidirectional Transient Voltage Suppressor Diode 11V 600mW 2-Pin DO-214AA
The MXSMBJ11AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 11V and maximum non-repetitive peak reverse power dissipation of 600mW. It features a breakdown voltage of 12.85V and a clamping voltage of 18.2V. The diode is packaged in a 2-pin DO-214AA package and is suitable for use in high-reliability applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXSMBJ11AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 11 |
| Breakdown Voltage-Min | 12.2 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 18.2 |
| Breakdown Voltage-Nom | 12.85 |
| Breakdown Voltage-Max | 13.5 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Datasheet
Microsemi MXSMBJ11AE3 Datasheet
Download the complete datasheet for Microsemi MXSMBJ11AE3 to view detailed technical specifications.
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