The MXSMBJ13AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 13V and a maximum non-repetitive peak reverse power dissipation of 600mW. It is packaged in a 2-pin DO-214AA package. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The device is suitable for use in applications where voltage suppression is required, such as in electronic circuits that are prone to voltage spikes or surges. The operating temperature range is not specified in the provided data, but the device is likely suitable for use in a wide range of temperatures.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXSMBJ13AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 14.4 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 21.5 |
| Breakdown Voltage-Nom | 15.15 |
| Breakdown Voltage-Max | 15.9 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Datasheet
Microsemi MXSMBJ13AE3 Datasheet
Download the complete datasheet for Microsemi MXSMBJ13AE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.