This silicon transient voltage suppressor diode features a maximum reverse voltage of 60V and a maximum non-repetitive peak reverse power dissipation of 1500W. The diode is packaged in a 2-pin DO-215AB plastic package, compliant with ROHS standards. It has a maximum power dissipation of 5W and a breakdown voltage of 70.2V (nominal) and 73.7V (maximum).
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXSMCGLCE60AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 60 |
| Breakdown Voltage-Min | 66.7 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 96.8 |
| Breakdown Voltage-Nom | 70.2 |
| Breakdown Voltage-Max | 73.7 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MXSMCGLCE60AE3 Datasheet
Download the complete datasheet for Microsemi MXSMCGLCE60AE3 to view detailed technical specifications.
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