Microsemi
SMBJ11AE3TR
Silicon Unidirectional Transient Voltage Suppressor Diode 12.85V 13.5V 600mW 2-Pin DO-214AA
The SMBJ11AE3TR is a unidirectional transient voltage suppressor diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a nominal breakdown voltage of 12.85 volts and a maximum breakdown voltage of 13.5 volts. The diode is made of silicon and has a maximum non-repetitive peak reverse power dissipation of 600 milliwatts. It is available in a 2-pin DO-214AA package.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi SMBJ11AE3TR technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 11 |
| Breakdown Voltage-Min | 12.2 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 18.2 |
| Breakdown Voltage-Nom | 12.85 |
| Breakdown Voltage-Max | 13.5 |
| Power Dissipation-Max | 1.38 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Microsemi SMBJ11AE3TR Datasheet
Download the complete datasheet for Microsemi SMBJ11AE3TR to view detailed technical specifications.
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