Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, with a 30V reverse standoff voltage. Features a 35.1V nominal breakdown voltage and a maximum clamping voltage of 48.4V. Operates across a wide temperature range from -65°C to 150°C. This silicon diode is housed in a DO-214AA plastic package with two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi SMBJ30A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Pin Count
2
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
30
Breakdown Voltage-Min
33.3
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
48.4
Breakdown Voltage-Nom
35.1
Breakdown Voltage-Max
36.8
Power Dissipation-Max
1.38
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
No
HTS Code
8541.10.00.50
REACH
not_compliant
Military Spec
False
Datasheet
Microsemi SMBJ30A Datasheet
Download the complete datasheet for Microsemi SMBJ30A to view detailed technical specifications.
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