Mitsubishi
FS10SM-18A
Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Technical Specifications
Mitsubishi FS10SM-18A technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 900V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Mitsubishi FS10SM-18A Datasheet
Download the complete datasheet for Mitsubishi FS10SM-18A to view detailed technical specifications.
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