Mitsubishi
FS3VS-18A
Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Technical Specifications
Mitsubishi FS3VS-18A technical specifications.
General
Continuous Drain Current (ID)
3A
Drain to Source Voltage (Vdss)
900V
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Mitsubishi FS3VS-18A Datasheet
Download the complete datasheet for Mitsubishi FS3VS-18A to view detailed technical specifications.
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