Mitsubishi
MGF4953B
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4
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Technical Specifications
Mitsubishi MGF4953B technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 4 |
| Terminal Position | BOTTOM |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi MGF4953B Datasheet
Download the complete datasheet for Mitsubishi MGF4953B to view detailed technical specifications.
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