Mitsubishi
MGFS48V2527
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC PACKAGE-4
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Technical Specifications
Mitsubishi MGFS48V2527 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi MGFS48V2527 Datasheet
Download the complete datasheet for Mitsubishi MGFS48V2527 to view detailed technical specifications.
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