Mitsubishi
RD00HHS1
RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Technical Specifications
Mitsubishi RD00HHS1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi RD00HHS1 Datasheet
Download the complete datasheet for Mitsubishi RD00HHS1 to view detailed technical specifications.
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