Mitsubishi
RD01MUS1
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-89, 3 PIN
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Technical Specifications
Mitsubishi RD01MUS1 technical specifications.
General
| Max Operating Temperature | 110 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi RD01MUS1 Datasheet
Download the complete datasheet for Mitsubishi RD01MUS1 to view detailed technical specifications.
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