PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-247 package. Features a maximum collector-emitter voltage of 230V and a maximum DC collector current of 15A. Offers a maximum power dissipation of 150,000mW and a minimum DC current gain of 80 at 1A/5V. Operates within a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Mospec Semiconductor 2SA1553O technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
16.2(Max)
Package Width (mm)
5.36(Max)
Package Height (mm)
22.38(Max)
Pin Pitch (mm)
5.66(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AD
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
230V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
230V
Maximum DC Collector Current
15A
Maximum Power Dissipation
150000mW
Minimum DC Current Gain
80@1A@5V
Maximum Transition Frequency
10(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SJ642
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Mospec Semiconductor 2SA1553O Datasheet
Download the complete datasheet for Mospec Semiconductor 2SA1553O to view detailed technical specifications.
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