PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-247 package. Features a maximum collector-emitter voltage of 230V and a maximum DC collector current of 15A. Offers a maximum power dissipation of 150,000mW and a minimum DC current gain of 80 at 1A/5V. Operates within a temperature range of -55°C to 150°C.
Mospec Semiconductor 2SA1553O technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.2(Max) |
| Package Width (mm) | 5.36(Max) |
| Package Height (mm) | 22.38(Max) |
| Pin Pitch (mm) | 5.66(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AD |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 230V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 230V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 150000mW |
| Minimum DC Current Gain | 80@1A@5V |
| Maximum Transition Frequency | 10(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SJ642 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Mospec Semiconductor 2SA1553O to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.