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Technical Specifications
Mospec Semiconductor 2SB826Q technical specifications.
General
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
12A
Maximum Power Dissipation
40000mW
Material
Si
Minimum DC Current Gain
70@1A@2V
Maximum Transition Frequency
5(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SJ642
EU RoHS
Yes
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Mospec Semiconductor 2SB826Q Datasheet
Download the complete datasheet for Mospec Semiconductor 2SB826Q to view detailed technical specifications.
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