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Technical Specifications
Mospec Semiconductor 2SB826S technical specifications.
General
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 12A |
| Maximum Power Dissipation | 40000mW |
| Material | Si |
| Minimum DC Current Gain | 140@1A@2V |
| Maximum Transition Frequency | 5(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SJ642 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Mospec Semiconductor 2SB826S Datasheet
Download the complete datasheet for Mospec Semiconductor 2SB826S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.