The 2SC3039N is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 400V and a maximum DC collector current of 7A. It has a maximum power dissipation of 50W and is made from silicon material. The transistor operates over a temperature range of -55°C to 150°C. It is a bipolar power transistor with a minimum DC current gain of 30 at a collector current of 0.8A and a base voltage of 5V.
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Technical Specifications
Mospec Semiconductor 2SC3039N technical specifications.
General
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 500V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum DC Collector Current | 7A |
| Maximum Power Dissipation | 50000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SJ642 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Mospec Semiconductor 2SC3039N Datasheet
Download the complete datasheet for Mospec Semiconductor 2SC3039N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.