The 2SD613C is a single NPN bipolar power transistor with a maximum collector-base voltage of 100V and a maximum collector-emitter voltage of 85V. It can handle a maximum DC collector current of 6A and has a minimum DC current gain of 40 at 1A and 5V. The transistor has a maximum transition frequency of 5 MHz and a maximum power dissipation of 40,000 mW. It operates over a temperature range of -55°C to 150°C.
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Technical Specifications
Mospec Semiconductor 2SD613C technical specifications.
General
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 85V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 40000mW |
| Minimum DC Current Gain | 40@1A@5V |
| Maximum Transition Frequency | 5(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SJ642 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Mospec Semiconductor 2SD613C Datasheet
Download the complete datasheet for Mospec Semiconductor 2SD613C to view detailed technical specifications.
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