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MULTICOMP

2N2102

Datasheet
MULTICOMP   2N2102   Bipolar (BJT) Single Transistor, NPN, 65 V, 60 MHz, 800 mW, 1 A, 40
Multicomp

2N2102

MULTICOMP 2N2102 Bipolar (BJT) Single Transistor, NPN, 65 V, 60 MHz, 800 mW, 1 A, 40

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors

PackageTO-39
PolarityNPN
Power800mW
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Technical Specifications

Multicomp 2N2102 technical specifications.

General

Package/Case
TO-39
Collector Emitter Breakdown Voltage
65V
Collector Emitter Voltage (VCEO)
65V
Max Operating Temperature
200°C
Max Power Dissipation
800mW
Polarity
NPN
Power Dissipation
800mW
Reach SVHC Compliant
Unknown
Transition Frequency
60MHz

Compliance

RoHS
Compliant

Datasheet

Multicomp 2N2102 Datasheet

Download the complete datasheet for Multicomp 2N2102 to view detailed technical specifications.

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