NPN Silicon Transistor for AF preamplifier applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO) and a maximum operating temperature of 200°C. Offers 800mW maximum power dissipation and a transition frequency of 400MHz. Packaged in a TO-39 case. RoHS compliant.
PackageTO-39
PolarityNPN
Power800mW
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Technical Specifications
Multicomp 2N3019 technical specifications.
General
| Package/Case | TO-39 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 800mW |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 400MHz |
Compliance
| RoHS | Compliant |
Datasheet
Multicomp 2N3019 Datasheet
Download the complete datasheet for Multicomp 2N3019 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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