The Multicomp 2N3637 is a PNP transistor packaged in a TO-39 case. It features a collector emitter breakdown voltage of -175V and a maximum power dissipation of 5W. The device operates within a temperature range of -55°C to 200°C. The 2N3637 is suitable for high-power applications.
Multicomp 2N3637 technical specifications.
| Package/Case | TO-39 |
| Collector Emitter Breakdown Voltage | -175V |
| Collector Emitter Voltage (VCEO) | -175V |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 5W |
| Polarity | PNP |
| Power Dissipation | 5W |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
Download the complete datasheet for Multicomp 2N3637 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
