The 1N5305 is a silicon current regulator diode with a maximum power dissipation of 0.6 watts. It is packaged in a DO-35 axial lead package with a maximum operating temperature of 200 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. The diode element is made of silicon and has a terminal position of axial. It is a single element current regulator diode with a JEDEC package code of DO-35.
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Technical Specifications
New Jersey Semiconductor 1N5305 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | CURRENT REGULATOR DIODE |
| Power Dissipation-Max | 0.6 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
New Jersey Semiconductor 1N5305 Datasheet
Download the complete datasheet for New Jersey Semiconductor 1N5305 to view detailed technical specifications.
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