The BAS321Z is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius. It features a dual terminal position and a maximum reverse voltage of 250 volts. The diode has a power dissipation of 0.3 watts and is constructed from silicon. It is packaged in a 2-pin R-PDSO-G2 package type.
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Technical Specifications
Nexperia BAS321Z technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 250 |
| Power Dissipation-Max | 0.3 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Nexperia BAS321Z Datasheet
Download the complete datasheet for Nexperia BAS321Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.