PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 65V collector-emitter voltage, 0.1A DC collector current, and 250mW power dissipation. This single-element transistor offers a minimum DC current gain of 220 at 2mA/5V and a minimum transition frequency of 100MHz. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads, it operates across a wide temperature range of -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Nexperia BC856B/B,235 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
65V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
250mW
Minimum DC Current Gain
220@2mA@5V
Maximum Transition Frequency
100(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H2HX9
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2002/95/EC
Datasheet
Nexperia BC856B/B,235 Datasheet
Download the complete datasheet for Nexperia BC856B/B,235 to view detailed technical specifications.
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