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Technical Specifications
Nexperia BSH202,215 technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.52A |
| Maximum Drain Source Resistance | 900@10VmOhm |
| Typical Gate Charge @ Vgs | 2.9@10VnC |
| Typical Gate Charge @ 10V | 2.9nC |
| Typical Input Capacitance @ Vds | 80@24VpF |
| Maximum Power Dissipation | 417mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Pin Count | 3 |
| Package/Case | SOT-23 |
| Package Family Name | SOT |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BSH202,215 Datasheet
Download the complete datasheet for Nexperia BSH202,215 to view detailed technical specifications.
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