The BST39/B,115 transistor is a surface mount NPN bipolar junction transistor with a single dual collector configuration. It features a maximum collector-base voltage of 400V, maximum collector-emitter voltage of 350V, and maximum power dissipation of 1300mW. The device is packaged in a SOT-89 package with a maximum length of 4.6mm, maximum width of 2.6mm, and maximum height of 1.6mm. The transistor is suitable for operation over a temperature range of -65°C to 150°C.
Nexperia BST39/B,115 technical specifications.
| Package/Case | SOT-89 |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Mounting | Surface Mount |
| Jedec | TO-243 |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 400V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 350V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 1300mW |
| Minimum DC Current Gain | 40@20mA@10V |
| Maximum Transition Frequency | 70(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Nexperia BST39/B,115 to view detailed technical specifications.
No datasheet is available for this part.