N-channel enhancement mode power MOSFET in a D2PAK surface-mount package, featuring a 60V drain-source voltage and 100A continuous drain current. This single-element device utilizes TMOS process technology and offers a low drain-source on-resistance of 3.9mΩ at 10V. With a maximum power dissipation of 263W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Nexperia BUK964R2-60E technical specifications.
General
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Mounting | Surface Mount |
| Jedec | TO-263AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 100A |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 3.9@10VmOhm |
| Typical Gate Charge @ Vgs | 72@5VnC |
| Typical Input Capacitance @ Vds | 8533@25VpF |
| Maximum Power Dissipation | 263000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BUK964R2-60E Datasheet
Download the complete datasheet for Nexperia BUK964R2-60E to view detailed technical specifications.
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