N-channel Power MOSFET, 55V drain-source voltage, 5.5A continuous drain current. Features TrenchFET process technology, 150mOhm maximum drain-source resistance at 5V. Packaged in a 4-pin SC-73 (TO-261AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operates from -55°C to 150°C, with a maximum power dissipation of 8300mW.
PackageSC-73
MountingSurface Mount
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Technical Specifications
Nexperia BUK98150-55,135 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SC
Package/Case
SC-73
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.7(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
1.7(Max)
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Package Orientation
Yes
Package Orientation Marking Type
Beveled Edge
Jedec
TO-261AA
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
55V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
5.5A
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
150@5VmOhm
Typical Input Capacitance @ Vds
250@25VpF
Maximum Power Dissipation
8300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
65pF
Compliance
Cage Code
H2HX9
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Nexperia BUK98150-55,135 Datasheet
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