Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring a 40V drain-source voltage and 30A continuous drain current. Surface mountable in an 8-pin LFPAK-D package with dimensions of 5.3mm (L) x 4.7mm (W) x 1.05mm (H). Offers a low drain-source on-resistance of 16mOhm at 10V gate-source voltage, with a maximum power dissipation of 38000mW and an operating temperature range of -55°C to 175°C.
PackageLFPAK-D
MountingSurface Mount
Quick Jump:
Technical Specifications
Nexperia BUK9K18-40E,115 technical specifications.
General
| Package/Case | LFPAK-D |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 1.05(Max) |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 30A |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 14.5@10VnC |
| Typical Gate Charge @ 10V | 14.5nC |
| Typical Input Capacitance @ Vds | 796@25VpF |
| Maximum Power Dissipation | 38000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BUK9K18-40E,115 Datasheet
Download the complete datasheet for Nexperia BUK9K18-40E,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.