The Nexperia BUT11APX-1200,127 is a single NPN bipolar junction transistor packaged in a TO-220F case with a 3-pin configuration. It has a maximum collector-base voltage of 1200V, maximum collector-emitter voltage of 550V, and maximum DC collector current of 6A. The transistor can dissipate a maximum power of 32W and operates over a temperature range of -65°C to 150°C. It is made from silicon material and has a minimum DC current gain of 13 at 1A and 5V, or 20 at 500mA and 5V.
Nexperia BUT11APX-1200,127 technical specifications.
| Package/Case | TO-220F |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 15.8(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1200V |
| Maximum Collector-Emitter Voltage | 550V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 32000mW |
| Material | Si |
| Minimum DC Current Gain | 13@1A@5V|20@500mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Nexperia BUT11APX-1200,127 to view detailed technical specifications.
No datasheet is available for this part.