The BUX85,127 is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 450V and a maximum DC collector current of 2A. It features a maximum power dissipation of 40W and is packaged in the TO-220AB style, suitable for through-hole mounting. The transistor has a minimum DC current gain of 15 at specific current and voltage conditions and a maximum transition frequency of 20 MHz. It operates within a temperature range of -65°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Nexperia BUX85,127 technical specifications.
General
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 450V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 40000mW |
| Material | Si |
| Minimum DC Current Gain | 15@5A@5V|20@100mA@5V |
| Maximum Transition Frequency | 20(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Nexperia BUX85,127 Datasheet
Download the complete datasheet for Nexperia BUX85,127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.