PNP bipolar junction transistor (BJT) designed for high-voltage applications. Features a 600 V breakdown voltage and a 0.1 A continuous collector current. Offers low VCEsat for improved efficiency. Housed in an SC-73 package with 4 terminals, arranged in a dual configuration. Single element transistor.
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Technical Specifications
Nexperia PBHV3160ZX technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Nexperia PBHV3160ZX Datasheet
Download the complete datasheet for Nexperia PBHV3160ZX to view detailed technical specifications.
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