PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage, 2A maximum DC collector current, and 1200mW maximum power dissipation. This single-element transistor is housed in a compact SOT-23 (TO-236AB) plastic package with 3 gull-wing leads and a 0.95mm pin pitch. Offers a minimum DC current gain of 200 at various collector currents and voltages, with a minimum transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Nexperia PBSS5350T/DG,215 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1200mW |
| Minimum DC Current Gain | 200@100mA@2V|200@500mA@2V|200@1A@2V|130@2A@2V|80@3A@2V |
| Maximum Transition Frequency | 100(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
Datasheet
Nexperia PBSS5350T/DG,215 Datasheet
Download the complete datasheet for Nexperia PBSS5350T/DG,215 to view detailed technical specifications.
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